Date of Completion

4-7-2016

Embargo Period

4-7-2016

Keywords

Carbon Nanotube/Copper-composite, Through Silicon Via, Multiscale Modeling, Molecular Dynamics, Finite Element Analysis, Microfabrication

Major Advisor

Leila Ladani

Associate Advisor

Chengyu Cao

Associate Advisor

George Lykotrafitis

Associate Advisor

Jafar Razmi

Associate Advisor

Steven Suib

Field of Study

Mechanical Engineering

Degree

Doctor of Philosophy

Open Access

Open Access

Abstract

Miniaturization of interconnects is inevitable for the next-generation microelectronic devices. Copper (Cu), the state-of-the-art filling material for interconnects, prohibits further miniaturization due to the low ampacity--current carrying capacity--and the high resistance at these scales. Copper would not withstand the high current densities at further miniaturized scales and Cu atoms electromigrates in turn. Carbon Nanotube/Cu-composites exhibit higher ampacity than Cu by two orders of magnitude and the same conductivity of Cu. Therefore, they are proposed in this study to replace Cu in Through Silicon Vias (TSVs). Due to the novelty of CNT/Cu-composite, information about their mechanical properties is scarce. Thus, a multiscale modeling approach is conducted to preliminary understand their behavior under different load scenarios. Also, a systematic fabrication technique is investigated.

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